Harris Semiconductor RFP18N08 overview
RFP18N08 is made by Harris Semiconductor. Harris Semiconductor RFP18N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max…
Manufactured byHarris Semiconductor
Part number or familyRFP18N08
Product typeProduct type not listed yet
Product details
Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor RFP18N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max (ID):18 A,Drain-source On Resistance-Max:100 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Harris Semiconductor
View Harris Semiconductor profile
Product type
Product type not listed yet
Available from
Sourcing support available
Start a sourcing request