Harris Semiconductor RFP12N20 overview
Harris Semiconductor RFP12N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
Manufactured byHarris Semiconductor
Part number or familyRFP12N20
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor RFP12N20 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:250 m?
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