Harris Semiconductor RFD7N10LE overview
Harris Semiconductor RFD7N10LE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
Manufactured byHarris Semiconductor
Part number or familyRFD7N10LE
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor RFD7N10LE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7 A,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:300 m?
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