Harris Semiconductor RFD3055LESM overview
RFD3055LESM is made by Harris Semiconductor. Harris Semiconductor RFD3055LESM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain…
Manufactured byHarris Semiconductor
Part number or familyRFD3055LESM
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor RFD3055LESM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:150 m?
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