Harris Semiconductor RF1K4915796 overview
Harris Semiconductor RF1K4915796 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Numbe...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor RF1K4915796 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):6.3 A,Drain-source On Resistance-Max:30 m?
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