Harris Semiconductor IRFR421 overview
IRFR421 is made by Harris Semiconductor. Harris Semiconductor IRFR421 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:450 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.5 A,Drain Current-Max…
Manufactured byHarris Semiconductor
Part number or familyIRFR421
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor IRFR421 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:450 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.5 A,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:3 ?
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