Harris Semiconductor IRFP351 overview
Harris Semiconductor IRFP351 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of ...
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Manufactured byHarris Semiconductor
Product typeIC Device
DescriptionHarris Semiconductor IRFP351 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:350 V,Number of Elements:1,Drain Current-Max (Abs) (ID):16 A,Drain Current-Max (ID):16 A,Drain-source On Resistance-Max:300 m?
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Harris Semiconductor
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Product type
IC Device
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