Harris Semiconductor IRFP251 overview
IRFP251 is made by Harris Semiconductor. Harris Semiconductor IRFP251 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):33 A,Drain Current-Max…
Manufactured byHarris Semiconductor
Part number or familyIRFP251
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor IRFP251 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (Abs) (ID):33 A,Drain Current-Max (ID):33 A,Drain-source On Resistance-Max:85 m?
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