Harris Semiconductor IRFF9122 overview
IRFF9122 is made by Harris Semiconductor. Harris Semiconductor IRFF9122 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3.5 A,Drain…
Manufactured byHarris Semiconductor
Part number or familyIRFF9122
Product typeProduct type not listed yet
Product details
Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor IRFF9122 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3.5 A,Drain Current-Max (ID):3.5 A,Drain-source On Resistance-Max:800 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Harris Semiconductor
View Harris Semiconductor profile
Product type
Product type not listed yet
Available from
Sourcing support available
Start a sourcing request