Harris Semiconductor IRF9512 overview
Harris Semiconductor IRF9512 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of ...
Manufactured byHarris Semiconductor
Part number or familyIRF9512
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor IRF9512 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.5 A,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:1.6 ?
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