Harris Semiconductor IRF242 overview
Harris Semiconductor IRF242 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of T...
Manufactured byHarris Semiconductor
Part number or familyIRF242
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor IRF242 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):16 A,Drain Current-Max (ID):16 A,Drain-source On Resistance-Max:220 m?
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