Harris Semiconductor IRF222R overview
Harris Semiconductor IRF222R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
Product details
Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor IRF222R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:1.2Ω
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Harris Semiconductor
View Harris Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request