Harris Semiconductor IRF221R overview
Harris Semiconductor IRF221R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor IRF221R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):5 A, Drain-source On Resistance-Max:800 mΩ
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