Harris Semiconductor HUF76113DK8 overview
Harris Semiconductor HUF76113DK8 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HUF76113DK8 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (Abs) (ID):6 A,Drain Current-Max (ID):6 A,Drain-source On Resistance-Max:41 m?
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Modules
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