Harris Semiconductor FSS130R1 overview
Harris Semiconductor FSS130R1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
Manufactured byHarris Semiconductor
Part number or familyFSS130R1
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor FSS130R1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:210 m?
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