Harris Semiconductor FRS430H1 overview
Harris Semiconductor FRS430H1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
Manufactured byHarris Semiconductor
Part number or familyFRS430H1
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor FRS430H1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:2.52 ?
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