Harris Semiconductor FRM234H2 overview
Harris Semiconductor FRM234H2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
Manufactured byHarris Semiconductor
Part number or familyFRM234H2
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor FRM234H2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7 A,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:700 m?
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