Harris Semiconductor 2N6898 overview
Harris Semiconductor 2N6898 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of T...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor 2N6898 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):25 A,Drain Current-Max (ID):25 A,Drain-source On Resistance-Max:200 m?
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Modules
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