Harris Semiconductor 2N6768TXV overview
Harris Semiconductor 2N6768TXV Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor 2N6768TXV Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:300 m?
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