Harris Semiconductor 2N6475-6258 overview
2N6475-6258 is made by Harris Semiconductor. Harris Semiconductor 2N6475-6258 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):2…
Manufactured byHarris Semiconductor
Part number or family2N6475-6258
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor 2N6475-6258 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):4 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):2, Transition Frequency-Nom (fT):4 mΩz
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