Harris Semiconductor HGTP1N120BND overview
HGTP1N120BND is made by Harris Semiconductor. Harris Semiconductor HGTP1N120BND IGBT, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):1 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
Manufactured byHarris Semiconductor
Part number or familyHGTP1N120BND
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor HGTP1N120BND IGBT, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):1 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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