Harris Semiconductor HGTP12N40C1 overview
HGTP12N40C1 is made by Harris Semiconductor. Harris Semiconductor HGTP12N40C1 IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO
Manufactured byHarris Semiconductor
Part number or familyHGTP12N40C1
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor HGTP12N40C1 IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO
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