Harris Semiconductor HGTM12N40C1 overview
Harris Semiconductor HGTM12N40C1 IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channe...
Manufactured byHarris Semiconductor
Part number or familyHGTM12N40C1
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor HGTM12N40C1 IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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