Harris Semiconductor HGTG34N100E2 overview
Harris Semiconductor HGTG34N100E2 IGBT, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):55 A, Polarity/Channel ...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGTG34N100E2 IGBT, Collector-Emitter Voltage-Max:1 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):55 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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