Harris Semiconductor HGTD6N40E1S overview
Harris Semiconductor HGTD6N40E1S IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):7.5 A, Polarity/Chann...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGTD6N40E1S IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):7.5 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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