Harris Semiconductor HGTD4N120B3DS overview
Harris Semiconductor HGTD4N120B3DS IGBT, Collector-Emitter Voltage-Max:1.2 kV, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUI...
Product details
Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGTD4N120B3DS IGBT, Collector-Emitter Voltage-Max:1.2 kV, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Harris Semiconductor
View Harris Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request