Harris Semiconductor HGTD10N50F1 overview
Harris Semiconductor HGTD10N50F1 IGBT, Collector-Emitter Voltage-Max:500 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channe...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGTD10N50F1 IGBT, Collector-Emitter Voltage-Max:500 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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