Harris Semiconductor HGTD10N40F1S9A overview
Harris Semiconductor HGTD10N40F1S9A IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Cha...
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Part number or familyHGTD10N40F1S9A
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor HGTD10N40F1S9A IGBT, Collector-Emitter Voltage-Max:400 V, Gate-Emitter Thr Voltage-Max:4.5 V, Collector Current-Max (IC):12 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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