Harris Semiconductor HGT1S7N60B3 overview
Harris Semiconductor HGT1S7N60B3 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):14 A, Polarity/Channel ...
Product details
Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGT1S7N60B3 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):14 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Harris Semiconductor
View Harris Semiconductor profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request