Harris Semiconductor HGT1S3N60C3DR overview
Harris Semiconductor HGT1S3N60C3DR IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO,...
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Manufactured byHarris Semiconductor
Product groupModules
DescriptionHarris Semiconductor HGT1S3N60C3DR IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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