Harris Semiconductor HGT1S12N60B3D overview
Harris Semiconductor HGT1S12N60B3D IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):27 A, Polarity/Channe...
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Part number or familyHGT1S12N60B3D
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Manufactured byHarris Semiconductor
DescriptionHarris Semiconductor HGT1S12N60B3D IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):27 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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