Gentron Corp EFMT422M167 overview
EFMT422M167 is a transistor made by Gentron Corp. Gentron Corp EFMT422M167 Igbt, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):32 A, Number of Elements:1
Product details
Manufactured byGentron Corp
Product typeTransistor
DescriptionGentron Corp EFMT422M167 Igbt, Collector-Emitter Voltage-Max:400 V, Collector Current-Max (IC):32 A, Number of Elements:1
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Manufactured by
Gentron Corp
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