Ge Solid State 3N200 overview
Ge Solid State 3N200 Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...
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Manufactured byGe Solid State
Product groupModules
DescriptionGe Solid State 3N200 Rf Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:20 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Power Gain-Min (Gp):10 dB, Drain Current-Max (ID):50 mΩ
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Modules
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