Galaxy Microelectronics MMBT5551 overview
Galaxy Microelectronics MMBT5551 Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:160 V,Collector Current-Max (IC):600 mA,Polarity/Channel Type:NP...
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Part number or familyMMBT5551
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Manufactured byGalaxy Microelectronics
DescriptionGalaxy Microelectronics MMBT5551 Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:160 V,Collector Current-Max (IC):600 mA,Polarity/Channel Type:NPN,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,Number of Elements:1,DC Current Gain-Min (hFE):30,Transition Frequency-Nom (fT):100 MHz
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