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D882E

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Galaxy Microelectronics D882E

Galaxy Microelectronics D882E overview

Galaxy Microelectronics D882E Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V,Collector Current-Max (IC):3 A,Polarity/Channel Type:NPN,Surfa...

Part number or familyD882E
Product groupModules

Product details

Manufactured byGalaxy Microelectronics
Product groupModules
DescriptionGalaxy Microelectronics D882E Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:30 V,Collector Current-Max (IC):3 A,Polarity/Channel Type:NPN,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,Number of Elements:1,DC Current Gain-Min (hFE):200,Transition Frequency-Nom (fT):90 MHz

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Manufactured by Galaxy Microelectronics View Galaxy Microelectronics profile
Product group Modules Explore Modules Explore IC Devices
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