Galaxy Microelectronics 2SB709A overview
2SB709A is made by Galaxy Microelectronics. Galaxy Microelectronics 2SB709A Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:45 V,Collector Current-Max (IC):100 mA,Polarity/Channel Type:PNP,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,Number of Elements:1,DC Current Gain-Min…
Manufactured byGalaxy Microelectronics
Part number or family2SB709A
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Manufactured byGalaxy Microelectronics
DescriptionGalaxy Microelectronics 2SB709A Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:45 V,Collector Current-Max (IC):100 mA,Polarity/Channel Type:PNP,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,Number of Elements:1,DC Current Gain-Min (hFE):160,Transition Frequency-Nom (fT):80 MHz
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