Galaxy Microelectronics BL9N30F overview
Galaxy Microelectronics BL9N30F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number ...
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Manufactured byGalaxy Microelectronics
Product groupModules
DescriptionGalaxy Microelectronics BL9N30F Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:300 V,Number of Elements:1,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:450 m?
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Modules
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