Galaxy Microelectronics BL3N80 overview
Galaxy Microelectronics BL3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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Manufactured byGalaxy Microelectronics
Product groupModules
DescriptionGalaxy Microelectronics BL3N80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:4.5 ?
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Galaxy Microelectronics
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Modules
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