Galaxy Microelectronics 2SD999M overview
Galaxy Microelectronics 2SD999M Power Bipolar Transistor, Collector-Emitter Voltage-Max:25 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface...
Product details
Manufactured byGalaxy Microelectronics
Product groupModules
DescriptionGalaxy Microelectronics 2SD999M Power Bipolar Transistor, Collector-Emitter Voltage-Max:25 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):90, Transition Frequency-Nom (fT):130 MHz
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Galaxy Microelectronics
View Galaxy Microelectronics profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request