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Manufactured byFujitsu
Product groupModules
DescriptionFUJITSU Limited FT6121D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:12, DS Breakdown Voltage-Min:120 V, Number of Elements:4, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:750 mΩ
DescriptionFUJITSU Limited FT6121D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:12,DS Breakdown Voltage-Min:120 V,Number of Elements:4,Drain Current-Max (ID):2.5 A,Drain-source On Resistance-Max:750 m?
DescriptionFUJITSU SIP
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