Fujitsu FLL600IQ-2C overview
FUJITSU Limited FLL600IQ-2C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, D...
Product details
Manufactured byFujitsu
Product typeTransistor
DescriptionFUJITSU Limited FLL600IQ-2C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:15 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (ID):13 A
DescriptionFUJITSU Limited FLL600IQ-2C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:15 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (ID):13 A
DescriptionFUJITSU 05+
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Fujitsu
View Fujitsu profile
Product type
Transistor
Explore Transistor Explore Integrated Circuits (ICs) Explore RF Power Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request
