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Manufactured byFujitsu
Product groupModules
DescriptionFUJITSU Limited FT5757M Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:12, Number of Elements:4, DC Current Gain-Min (hFE):500
DescriptionFUJITSU Limited FT5757M Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:12, Number of Elements:4, DC Current Gain-Min (hFE):500
DescriptionFUJITSU FT5757M - TBD -, SILICON DARLINGTON TRANSISTOR ARRAY
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