FUJITSU Semiconductor Limited MB81117422E-100FN overview
FUJITSU Semiconductor Limited MB81117422E-100FN Dram, Memory Density:16.7772 Mbit, Memory Width:4, Organization:4MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Sup...
Manufactured byFUJITSU Semiconductor Limited
Part number or familyMB81117422E-100FN
Product groupDRAM's
Product details
Manufactured byFUJITSU Semiconductor Limited
Product groupDRAM's
DescriptionFUJITSU Semiconductor Limited MB81117422E-100FN Dram, Memory Density:16.7772 Mbit, Memory Width:4, Organization:4MX4, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048, Access Mode:DUAL BANK PAGE BURST
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