Fujitsu 2MBI1200VG-170E overview
2MBI1200VG-170E is made by Fujitsu. FUJITSU Semiconductor Limited 2MBI1200VG-170E IGBT, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):1.6 kA, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, Number of Elements:2
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Manufactured byFujitsu
DescriptionFUJITSU Semiconductor Limited 2MBI1200VG-170E IGBT, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):1.6 kA, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, Number of Elements:2
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