Fuji Electric 2SK3875-01 overview
Fuji Electric Co Ltd 2SK3875-01 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number ...
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Manufactured byFuji Electric
Product typeDiscrete Device
DescriptionFuji Electric Co Ltd 2SK3875-01 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:900 V,Number of Elements:1,Drain Current-Max (ID):13 A,Drain-source On Resistance-Max:1 ?
DescriptionMOSFET, POWER, AVALANCHE RATED, N-CHANNEL, 900V, 13A, 355W, 1 OHM, TO-247
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Fuji Electric
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Discrete Device
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