Fuji Electric 2SJ475-01 overview
2SJ475-01 is a discrete device made by Fuji Electric. Fuji Electric Co Ltd 2SJ475-01 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):25 A,Drain-source On…
Product details
Manufactured byFuji Electric
Product typeDiscrete Device
DescriptionFuji Electric Co Ltd 2SJ475-01 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):25 A,Drain-source On Resistance-Max:110 m?
DescriptionMOSFET, POWER, AVALANCHE RATED, P-CHANEL, -60V, -25A, 40W, 0.06 OHM, TO-220AB
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Fuji Electric
View Fuji Electric profile
Product type
Discrete Device
Explore Discrete Device
Available from
Sourcing support available
Start a sourcing request