Fairchild Semiconductor IRLW530ATM overview
IRLW530ATM is a semiconductor made by Fairchild Semiconductor. Fairchild Semiconductor Corporation IRLW530ATM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain…
Product details
Manufactured byFairchild Semiconductor
Product typeSemiconductor
DescriptionFairchild Semiconductor Corporation IRLW530ATM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):14 A,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:120 m?
DescriptionFairchild Semiconductor IRLW530ATM Semiconductors
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Fairchild Semiconductor
View Fairchild Semiconductor profile
Product type
Semiconductor
Explore Semiconductor
Available from
Sourcing support available
Start a sourcing request