Fairchild Semiconductor IRFR210BTM_FP001 overview
Fairchild Semiconductor Corporation IRFR210BTM_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH ...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation IRFR210BTM_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.7 A,Drain Current-Max (ID):2.7 A,Drain-source On Resistance-Max:1.5 ?
DescriptionFairchild Semiconductor IRFR210BTM_FP001 Semiconductors
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