Fairchild Semiconductor IRF644B_FP001 overview
Fairchild Semiconductor Corporation IRF644B_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUIL...
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Manufactured byFairchild Semiconductor
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DescriptionFairchild Semiconductor Corporation IRF644B_FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):14 A,Drain Current-Max (ID):14 A,Drain-source On Resistance-Max:280 m?
DescriptionFairchild Semiconductor IRF644B_FP001 Semiconductors
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