Fairchild Semiconductor HGTD3N60A4S overview
HGTD3N60A4S is a semiconductor made by Fairchild Semiconductor. Fairchild Semiconductor Corporation HGTD3N60A4S IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):17 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2…
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Manufactured byFairchild Semiconductor
Product typeSemiconductor
DescriptionFairchild Semiconductor Corporation HGTD3N60A4S IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):17 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
DescriptionFairchild Semiconductor HGTD3N60A4S Semiconductors
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Semiconductor
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